Photoelectric conversion device and imaging device

摘要

Provided is a solid-state imaging device using an organic photoelectric conversion device which functions as a photoelectric conversion device having high photoelectric conversion efficiency when applied to the photoelectric conversion device, having a small absolute value of a dark current, and exhibiting favorable characteristics at a room temperature to 60° C. The photoelectric conversion device includes a pair of electrodes, a photoelectric conversion layer interposed between the pair of electrodes, which is a bulk hetero layer where fullerene or a fullerene derivative and a p-type organic semiconductor material are mixed and having an ionization potential of from 5.2 eV to 5.6 eV, and at least one electron blocking layer between at least one electrode of the pair of electrodes and the photoelectric conversion layer, and the ionization potential of the electron blocking layer adjacent to the photoelectric conversion layer being higher than the ionization potential of the photoelectric conversion layer.

主权项

1. A photoelectric conversion device comprising:
a pair of electrodes; and a photoelectric conversion layer interposed between the pair of electrodes, wherein the photoelectric conversion layer is a bulk hetero layer where a fullerene or a fullerene derivative and a p-type organic semiconductor material are mixed, an ionization potential of the photoelectric conversion layer is 5.2 eV to 5.6 eV, at least one electron blocking layer is provided between at least one of the pair of electrodes and the photoelectric conversion layer, and the ionization potential of the electron blocking layer adjacent to the photoelectric conversion layer is higher than the ionization potential of the photoelectric conversion layer.