Methods of fabricating silicon carbide devices having smooth channels

摘要

Methods of forming silicon carbide power devices are provided. An n− silicon carbide layer is provided on a silicon carbide substrate. A p-type silicon carbide well region is provided on the n− silicon carbide layer. A buried region of p+ silicon carbide is provided on the p-type silicon carbide well region. An n+ region of silicon carbide is provided on the buried region of p+ silicon carbide. A channel region of the power device is adjacent the buried region of p+ silicon carbide and the n+ region of silicon carbide. An n− region is provided on the channel region and a portion of the n− region is removed from the channel region so that a portion of the n− region remains on the channel region to provide a reduction in a surface roughness of the channel region.

主权项

1. A method of forming a silicon carbide power device, comprising:
providing an n-type silicon carbide region; providing a p-type silicon carbide region adjacent the n-type silicon carbide region; and providing an n− silicon carbide region only on a channel region of the device that provides a reduction in surface roughness of the channel region of the silicon carbide power device; wherein the channel region of the silicon carbide power device includes at least portions of the n-type silicon carbide region, the p-type silicon carbide region and the n− silicon carbide region.