发明名称 |
Method for producing N-type group III nitride single crystal, N-type group III nitride single crystal, and crystal substrate |
摘要 |
A method of producing an n-type group III nitride single crystal includes putting raw materials that include at least a substance including a group III element, an alkali metal, and boron oxide into a reaction vessel; melting the boron oxide by heating the reaction vessel to a melting point of the boron oxide; forming a mixed melt which includes the group III element, the alkali metal, and the boron oxide, in the reaction vessel by heating the reaction vessel to a crystal growth temperature of a group III nitride; dissolving nitrogen into the mixed melt by bringing a nitrogen-containing gas into contact with the mixed melt; and growing an n-type group III nitride single crystal, which is doped with oxygen as a donor, from the group III element, the nitrogen, and oxygen in the boron oxide that are dissolved in the mixed melt. |
申请公布号 |
US8858908(B2) |
申请公布日期 |
2014.10.14 |
申请号 |
US201113220939 |
申请日期 |
2011.08.30 |
申请人 |
Ricoh Company, Ltd. |
发明人 |
Iwata Hirokazu |
分类号 |
C01B15/12;C01B17/66;C01B21/06;C23F11/04;H01B1/02;C30B9/00;C30B13/00;C30B15/00;C30B29/40;C30B9/10;H01B1/06;C30B29/38 |
主分类号 |
C01B15/12 |
代理机构 |
Cooper & Dunham LLP |
代理人 |
Cooper & Dunham LLP |
主权项 |
1. A method of producing an n-type group III nitride single crystal, comprising: putting raw materials that include at least a substance including a group III element, an alkali metal, and boron oxide into a reaction vessel;
melting the boron oxide by heating the reaction vessel to a melting point of the boron oxide; forming a mixed melt which includes the group III element, the alkali metal, and the boron oxide, in the reaction vessel by heating the reaction vessel to a crystal growth temperature of a group III nitride; dissolving nitrogen into the mixed melt by bringing a nitrogen-containing gas into contact with the mixed melt; and growing an n-type group III nitride single crystal which is doped with oxygen as a donor from the mixed melt comprising from the group III element, the nitrogen, and oxygen from the decomposed boron oxide that is dissolved in the mixed melt. |
地址 |
Tokyo JP |