发明名称 Patterning process
摘要 A patterning process comprises (a) providing at least one substrate having at least one major surface; (b) providing at least one patterning composition comprising at least one functionalizing molecule that is a perfluoropolyether organosulfur compound; (c) applying the patterning composition to the major surface of the substrate in a manner so as to form at least one functionalized region and at least one unfunctionalized region of the major surface; and (d) etching at least a portion of the unfunctionalized region.
申请公布号 US8858813(B2) 申请公布日期 2014.10.14
申请号 US200913130320 申请日期 2009.12.02
申请人 3M Innovative Properties Company 发明人 Zu Lijun;Frey Matthew H.;Iyer Suresh S.
分类号 C03C15/00;C07C323/60;B05D1/18;B82Y30/00;B82Y40/00;C07C323/41;C07C323/52;C08G65/00;C08G65/334;C09D171/02;G03F7/00 主分类号 C03C15/00
代理机构 代理人 Weiss Lucy C.
主权项 1. A process comprising (a) providing at least one substrate having at least one major surface comprising at least one elemental metal, at least one metal alloy, at least one metal-containing compound, or a combination thereof; (b) providing at least one patterning composition comprising at least one functionalizing molecule that is a perfluoropolyether organosulfur compound comprising at least one perfluoropolyether segment selected from F[CF(CF3)CF2O]aCF(CF3)—, wherein a has an average value of 4 to 20, and —CF(CF3)(OCF2CF(CF3)bOCF2CF2CF2CF2O(CF(CF3)CF2O)cCF(CF3)—, wherein b+c has an average value of 4 to 15; (c) applying said patterning composition to said major surface of said substrate in a manner so as to form at least one functionalized region and at least one unfunctionalized region of said major surface; and (d) etching at least a portion of said unfunctionalized region.
地址 St. Paul MN US
您可能感兴趣的专利