Polysilicon photodetector, methods and applications

摘要

A silicon photonic photodetector structure, a method for fabricating the silicon photonic photodetector structure and a method for operating a silicon photonic photodetector device that results from the photonic photodetector structure each use a strip waveguide optically coupled with a polysilicon material photodetector layer that may be contiguous with a semiconductor material slab to which is located and formed a pair of electrical contacts separated by the polysilicon material photodetector layer. Within the foregoing silicon photonic photodetector structure and related methods the polysilicon material photodetector layer includes defect states suitable for absorbing an optical signal from the strip waveguide and generating an electrical output signal using at least one of the electrical contacts when the optical signal includes a photon energy less than a band gap energy of a polysilicon material from which is comprised the polysilicon material photodetector layer.

主权项

1. A photonic structure comprising:
a strip waveguide located over a substrate; a polysilicon material photodetector layer also located over the substrate and optically coupled with the strip waveguide, the polysilicon material photodetector layer contiguous with a semiconductor material slab also located over the substrate, the polysilicon material photodetector layer and the semiconductor material slab being formed of the same polysilicon material; and a pair of electrical contacts contacting a pair of doped semiconductor regions located within separated portions of the polysilicon material photodetector layer, wherein:
the semiconductor material slab and the polysilicon material photodetector layer have a dopant concentration from about 1e14 to less than about 1e18 dopant atoms per cubic centimeter;one of the pair of doped semiconductor regions comprises a p+ dopant at a concentration from greater than about 1E18 to about 1E22 dopant atoms per cubic centimeter; andthe other of the pair of doped semiconductor regions comprises an n+ dopant at a concentration from greater than about 1E18 to about 1E22 dopant atoms per cubic centimeter.