发明名称 Method to drive semiconductor laser diode
摘要 A method or algorithm to control a driving current supplied to a semiconductor laser diode (LD) is disclosed. the method first prepares the look-up-table (LUT) that stores a set of parameters, α and β, for evaluating the modulation current Im by the equation of Im=α×Ib+β, where Ib is determined by the auto-power-control (APC) loop. In a practical operation of the LD, the APC loop determines Ib, while, Im is calculated according to the equation above by reading above two parameters corresponding to the current temperature of the LD from the LUT.
申请公布号 US8861559(B2) 申请公布日期 2014.10.14
申请号 US201213433489 申请日期 2012.03.29
申请人 Sumitomo Electric Device Innovations, Inc. 发明人 Tang Fengliang;Kitagawa Kentarou
分类号 H01S3/00;H01S5/0683;H01S5/00 主分类号 H01S3/00
代理机构 Smith, Gambrell & Russell LLP 代理人 Smith, Gambrell & Russell LLP
主权项 1. A method to drive a semiconductor laser diode (LD) by supplying a bias current determined by an auto-power control (APC) loop and a modulation current Im calculated from the bias current based on a linear dependence of Im=α×Ib+β, the method comprising steps of: preparing a look-up-table (LUT) by procedures including, evaluating a plurality of sets of two parameters, (α, β)i (i=1 to n), at respective temperatures Ti (i=1 to n), evaluating a first linear dependence of one of parameters, αi (i=1 to n), against temperatures to determine a slope and a y-intercept, aα and bα, of the first linear dependence, respectively and a second linear dependence of another of parameters, βi (i=1 to n), against temperatures to determine a slope and a y-intercept, aβ and bβ, of the second linear dependence, respectively, storing two slopes, aα and aβ, and other two y-intercepts, bα and bβ, in the LUT; sensing a current temperature T of the LD; calculating a set of parameters (α, β)T by referring to two slopes, aα and aβ and two y-intercepts, bα and bβ in the LUT, according to equations of: αT=aα×T+bα, andβT=aβ×T+bβ.
地址 Kanagawa JP