发明名称 |
Method of forming electronic components with increased reliability |
摘要 |
An electronic component includes a depletion-mode transistor, an enhancement-mode transistor, and a resistor. The depletion-mode transistor has a higher breakdown voltage than the enhancement-mode transistor. A first terminal of the resistor is electrically connected to a source of the enhancement-mode transistor, and a second terminal of the resistor and a source of the depletion-mode transistor are each electrically connected to a drain of the enhancement-mode transistor. A gate of the depletion-mode transistor can be electrically connected to a source of the enhancement-mode transistor. |
申请公布号 |
US8860495(B2) |
申请公布日期 |
2014.10.14 |
申请号 |
US201314068944 |
申请日期 |
2013.10.31 |
申请人 |
Transphorm Inc. |
发明人 |
Lal Rakesh K.;Coffie Robert;Wu Yifeng;Parikh Primit;Dora Yuvaraj;Mishra Umesh;Chowdhury Srabanti;Fichtenbaum Nicholas |
分类号 |
H03K17/687 |
主分类号 |
H03K17/687 |
代理机构 |
Fish & Richardson P.C. |
代理人 |
Fish & Richardson P.C. |
主权项 |
1. A method of producing an electronic component, the method comprising:
providing an enhancement-mode transistor having a first threshold voltage and a first breakdown voltage, the enhancement-mode transistor comprising a first source, a first gate, and a first drain; providing a depletion-mode transistor having a second breakdown voltage which is larger than the first breakdown voltage, the depletion-mode transistor having a second threshold voltage, the depletion-mode transistor comprising a second source, a second gate, and a second drain; and connecting the second source to the first drain; wherein at a first temperature, an off-state drain current of the enhancement-mode transistor under a first bias condition is greater than an off-state source current of the depletion-mode transistor under a second bias condition; under the first bias condition, a first voltage of the first gate relative to the first source is less than the first threshold voltage, and a second voltage of the second drain relative to the first source is greater than the first breakdown voltage and less than the second breakdown voltage; and under the second bias condition, a third voltage of the second gate relative to the second source is less than the second threshold voltage, and a fourth voltage of the second drain relative to the second gate is equal to the second voltage. |
地址 |
Goleta CA US |