Crack-arresting structure for through-silicon vias

摘要

The subject matter disclosed herein relates to structures formed on semiconductor chips that are used for at least partially addressing the thermally induced stresses and metallization system cracking problems in a semiconductor chip that may be caused by the presence of through-silicon vias (TSV's), and which may be due primarily to the significant differences in thermal expansion between the materials of the TSV's and the semiconductor-based materials that generally make up the remainder of the semiconductor chip. One device disclosed herein includes a substrate and a crack-arresting structure positioned above the substrate, the crack-arresting structure comprising a plurality of crack-arresting elements and having a perimeter when viewed from above. The device also includes a conductive structure positioned at least partially within the perimeter of the crack-arresting structure, and a conductive element extending through an opening in the crack-arresting structure, wherein the conductive element is conductively coupled to the conductive structure.

主权项

1. A device, comprising:
a substrate; a crack-arresting structure positioned above said substrate, said crack-arresting structure comprising a plurality of crack-arresting elements and having a perimeter when viewed from above, wherein said crack-arresting structure is positioned in a metallization system comprising a plurality of metallization layers, said metallization system being positioned above said substrate, and wherein said plurality of crack-arresting elements comprises a plurality of metal lines and a plurality of metal bars; a conductive structure positioned at least partially within said perimeter of said crack-arresting structure; and a conductive element extending through an opening in said crack-arresting structure, wherein said conductive element is conductively coupled to said conductive structure.