Semiconductor device and method for manufacturing the same

摘要

An antifuse of a semiconductor device includes a semiconductor substrate including a device isolation layer and an active region, a gate structure extending across an interface between the device isolation layer and the active region, a contact coupled to at least a portion of a sidewall of the gate structure, and a metal interconnection provided on the contact and gate structure.

主权项

1. A semiconductor device with an antifuse unit, the antifuse unit comprising:
a semiconductor substrate including a device isolation layer and an active region; a gate structure extending across an interface between the device isolation layer and the active region, the gate structure including a layer that is configured to be ruptured in an antifuse operation; a contact surrounding all sidewalls of the gate structure; and a metal interconnection provided on the contact and the gate structure.