ESD protection element

摘要

In an aspect of the present invention, an ESD (Electrostatic Discharge) protection element includes a bipolar transistor comprising a collector diffusion layer connected with a first terminal and an emitter diffusion layer; and current control resistances provided for a plurality of current paths from a second terminal to the collector diffusion layer through the emitter diffusion layer, respectively. The bipolar transistor further includes a base diffusion region connected with the second terminal through a first resistance which is different from the current control resistances.

主权项

1. An ESD (Electrostatic Discharge) protection element comprising:
a bipolar transistor comprising:
a collector diffusion layer connected with a first terminal;a base diffusion layer; andan emitter diffusion layer; a first wire connected to the emitter diffusion layer and the base diffusion layer; a second wire connected to the emitter diffusion layer and the base diffusion layer; a first current control resistance connected to a second terminal, and connected to the first wire by a first contact; a second current control resistance connected to the second terminal, and connected to the second wire by a second contact, wherein the collector diffusion layer and the emitter diffusion layer are each arranged in a base width direction, the first and second wires and the first and second current control resistances are each arranged in a direction that is perpendicular to the base width direction, and wherein current flowing out to a power supply voltage is distributed to flow through the first and second current control resistances in order to reduce current concentration in a breakdown path.