发明名称 Thin film transistor substrate, method of manufacturing the same, and display apparatus having the same which improve switching characteristics
摘要 A thin film transistor substrate that includes a substrate, first and second gate electrodes that are formed on the substrate, a gate insulating layer that is formed on the first and second gate electrodes, a first semiconductor and a second semiconductor that are formed on the gate insulating layer, and that overlap the first gate electrode and the second gate electrode, respectively, a first source electrode and a first drain electrode that are formed on the first semiconductor, and positioned opposed to and spaced from each other, a source electrode connected to the first drain electrode and a second drain electrode positioned opposed to and spaced from the second source electrode, wherein the second source and second drain electrodes are formed on the second semiconductor, and a pixel electrode that is electrically connected to the second drain electrode, a method of manufacturing the same, and a display apparatus having the same.
申请公布号 US8860032(B2) 申请公布日期 2014.10.14
申请号 US200912466100 申请日期 2009.05.14
申请人 Samsung Display Co., Ltd. 发明人 Choo Byoung-Kwon;Choi Joon-Hoo;Cho Kyu-Sik;Park Seung-Kyu;Park Yong-Hwan;Moon Sang-Ho
分类号 H01L27/14;H01L27/12;H01L29/786 主分类号 H01L27/14
代理机构 F. Chau & Associates, LLC 代理人 F. Chau & Associates, LLC
主权项 1. A thin film transistor substrate, comprising: a substrate; first and second gate electrodes disposed on the substrate; a gate insulating layer disposed on the first and second gate electrodes; first semiconductor and a second semiconductor disposed on the gate insulating layer, and overlapping the first gate electrode and the second gate electrode, respectively; a first source electrode and a first drain electrode disposed on the first semiconductor, wherein the first source and first drain electrodes are positioned opposed to and spaced apart from each other; a second source electrode connected to the first drain electrode and a second drain electrode positioned opposed to and spaced apart from the second source electrode, wherein the second source and second drain electrodes are disposed on the second semiconductor, wherein the second drain electrode is positioned on the substrate adjacent the first drain electrode and between the second source electrode and the first drain electrode; and a pixel electrode electrically connected to the second drain electrode, wherein the first drain electrode is directly connected to the second source electrode.
地址 Yongin, Gyeonggi-do KR