Fuse of semiconductor device and method for forming the same

摘要

A fuse of a semiconductor device and a method for forming the same are disclosed. The fuse includes a first metal line formed over a semiconductor substrate, a second metal line spaced apart from the first metal line, and a contact fuses formed of a metal contact coupled to the first metal line and the second metal line. Upper parts of the contact fuses overlap with each other, and lower parts are spaced apart from each other. Since the fuse is formed of a metal contact, fuse oxidation and fuse movement can be prevented. A conventional metal-contact fabrication process can be used, so that mass production of semiconductor devices is possible. In addition, the fuse region is reduced in size, reducing production costs.

主权项

1. A fuse for a semiconductor device comprising:
a first metal line formed over a semiconductor substrate, and a second metal line spaced apart from the first metal line, and a dummy line disposed between the first metal and the second metal line; and contact fuses including metal contacts coupled to the first metal line and the second metal line, each of the metal contacts having an upper portion with a first width and a lower portion with a second width that is less than the first width, wherein the upper portions of the contact fuses overlap with each other, and the lower portions are spaced apart from each other, and wherein the upper portions of neighboring metal contacts are in physical contact with each other, and the lower portions of neighboring metal contacts are insulated from each other.