发明名称 Enhanced etch and deposition profile control using plasma sheath engineering
摘要 A plasma processing tool is used to deposit material on a workpiece. For example, a method for conformal deposition of material is disclosed. In this embodiment, the plasma sheath shape is modified to allow material to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of different features can be deposited onto. In another embodiment, a plasma processing tool is used to etch a workpiece. In this embodiment, the plasma sheath shape is altered to allow ions to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of differently shaped features can be created.
申请公布号 US8858816(B2) 申请公布日期 2014.10.14
申请号 US201314055121 申请日期 2013.10.16
申请人 Varian Semiconductor Equipment Associates, Inc. 发明人 Godet Ludovic;Miller Timothy;Papasouliotis George;Singh Vikram
分类号 B44C1/22;C03C15/00;C03C25/68;C23F1/00;H01J37/32;C23C16/50;C23C16/04 主分类号 B44C1/22
代理机构 代理人
主权项 1. A method of etching a three dimensional feature, having a desired width, depth and taper, in a workpiece, comprising: generating a plasma having a plasma sheath adjacent to a front surface of the workpiece; and modifying a shape of a boundary between the plasma and the plasma sheath while accelerating material from the plasma across the boundary to etch the three dimensional feature on the front surface of the workpiece wherein the material strikes the three dimensional feature at a range of incident angles, and wherein the range of incident angles is dependent on the shape of the boundary between the plasma and the plasma sheath.
地址 Gloucester MA US