PREPARATION METHOD OF ZNO:AL THIN FILM

摘要

The present invention relates to a method for manufacturing an aluminum-doped zinc oxide (ZnO:Al) thin film in which aluminum is doped and, more specifically, to a method for manufacturing an aluminum-doped zinc oxide thin film with high conductivity and mobility and high thermoelectric effect by processing an aluminum-doped zinc oxide thin film with low conductivity and mobility and low thermoelectric effect through various heat treatment methods. The aluminum-doped zinc oxide thin film manufactured according to the present invention can improve the structural, electrical, and thermal characteristics of the thin film to be efficiently used as a transparent conducting semiconductor thin film instead of a relatively expensive ITO thin film in a solar cell and a thermoelectric element.