| 发明名称 | Semiconductor device having diode characteristic | ||
| 摘要 | According to one embodiment, a semiconductor device is provided. The semiconductor device has a first region formed of semiconductor and a second region formed of semiconductor which borders the first region. An electrode is formed to be in ohmic-connection with the first region. A third region is formed to sandwich the first region. A first potential difference is produced between the first and the second regions in a thermal equilibrium state, according to a second potential difference between the third region and the first region. | ||
| 申请公布号 | US8860171(B2) | 申请公布日期 | 2014.10.14 |
| 申请号 | US201012968188 | 申请日期 | 2010.12.14 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Kitagawa Mitsuhiko |
| 分类号 | H01L29/66;H01L29/78;H01L29/861;H01L27/06;H01L27/08;H01L29/06;H01L29/20 | 主分类号 | H01L29/66 |
| 代理机构 | Patterson & Sheridan, LLP | 代理人 | Patterson & Sheridan, LLP |
| 主权项 | 1. A semiconductor device comprising: a first region formed of semiconductor; a second region formed of semiconductor which borders the first region; an electrode formed to be in ohmic-connection with the first region; and a third region formed to sandwich the first region with the second region, wherein a first potential difference that is produced between the first and the second regions in a thermal equilibrium state is based on a second potential difference between the third region and the first region. | ||
| 地址 | Tokyo JP | ||