GATE DIELECTRIC LAYER FORMING METHOD

摘要

The present invention provides a gate insulating film forming method. A plasma processing device includes: surrounding dielectric tubes placed on a circumference at the center of an upper surface of a chamber at regular intervals; surrounding antennas placed to surround the dielectric tubes; upper magnets placed on a first plane by being vertically separated from the dielectric tubes; and lower magnets placed on a second plane between the upper magnets and the dielectric tubes. The gate insulating film forming method of the plasma processing device includes a step of forming a silicon oxide film operated as a gate insulating film on an activation area of a silicon substrate placed in the chamber, and a step of forming a silicon oxide nitride film operated as the gate insulating film on the silicon oxide film. The silicon oxide film forming step includes oxidizing the silicon substrate by exposing helicon plasma formed by providing gas including oxygen to the chamber through the dielectric tubes to the silicon substrate. The silicon oxide nitride film forming step forms the silicon oxide nitride film by exposing the helicon plasma formed by providing gas including nitrogen to the chamber through the dielectric tubes to the silicon oxide film.