| 主权项 |
1. A semiconductor unit, comprising a molded product of a semiconductor element and peripheral wirings resin-encapsulated with a semiconductor device encapsulant,
the semiconductor device encapsulant comprising 100 parts by weight of a synthetic resin (A), 10 to 400 parts by weight of a carbon precursor (B) having a volume resistivity of 102 to 1010 Ω·cm, 5 to 60 parts by weight of a conductive filler (C) having a volume resistivity lower than 102 Ω·cm, and 200 to 1500 parts by weight of another filler (D), wherein (i) the synthetic resin (A) is an epoxy resin component containing an epoxy compound having at least 2 epoxy groups in its molecule, and a curing agent, (ii) the conductive filler (C) is carbon fiber, graphite, conductive carbon black or mixtures thereof, (iii) the other filler (D) is silica filler, (iv) a total proportion of the fillers composed of the carbon precursor (B), the conductive filler (C), and the other filler (D) is 70 to 93% by weight of the total weight of the semiconductor device encapsulant, and (v) a surface resistivity of the semiconductor unit is 106 to 1012Ω/□. |
