Devices, systems, and methods related to forming through-substrate vias with sacrificial plugs

摘要

Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming one or more openings in a front side of the semiconductor device and forming sacrificial plugs in the openings that partially fill the openings. The method further includes further filling the partially filled openings with a conductive material, where individual sacrificial plugs are generally between the conductive material and a substrate of the semiconductor device. The sacrificial plugs are exposed at a backside of the semiconductor device. Contact regions can be formed at the backside by removing the sacrificial plugs.

主权项

1. A method of manufacturing a semiconductor device, comprising:
forming one or more openings in a front side of the semiconductor device that extend through a portion of a substrate of the semiconductor device and define a surface in the substrate at a bottom of the opening; forming sacrificial plugs in the openings; further filling the openings with a conductive material, wherein individual sacrificial plugs are generally between the conductive material and the surface in the substrate at the bottom of the opening; exposing the sacrificial plugs at a backside of the semiconductor device without exposing the conductive material at the backside; and forming contact regions aligned in the openings by removing the sacrificial plugs.