Gate constructions of recessed access devices and methods of forming gate constructions of recessed access devices

摘要

A method of forming a gate construction of a recessed access device includes forming a pair of sidewall spacers laterally over opposing sidewalls of a gate dielectric and elevationally over first conductive gate material. The gate dielectric, the first conductive gate material, and the sidewall spacers are received within a trench formed in semiconductive material. Second conductive gate material is deposited within the semiconductive material trench between the pair of sidewall spacers in electrical connection with the first conductive gate material. Other implementations are disclosed, including recessed access device gate constructions independent of method of manufacture.

主权项

1. A method of forming a gate construction of a recessed access device, comprising:
forming a pair of non-dielectric sidewall spacers laterally over opposing sidewalls of a gate dielectric and elevationally over first conductive gate material; the gate dielectric, the first conductive gate material, and the sidewall spacers being within a trench formed in semiconductive material, the sidewall spacers projecting elevationally outward of the semiconductive material in which the trench is formed and projecting elevationally outward of the gate dielectric; and depositing second conductive gate material within the semiconductive material trench between the pair of sidewall spacers in electrical connection with the first conductive gate material.