Semiconductor-on-insulator with back side body connection

摘要

Embodiments of the present invention provide for the removal of excess carriers from the body of active devices in semiconductor-on-insulator (SOI) structures. In one embodiment, a method of fabricating an integrated circuit is disclosed. In one step, an active device is formed in an active layer of a semiconductor-on-insulator wafer. In another step, substrate material is removed from a substrate layer disposed on a back side of the SOI wafer. In another step, an insulator material is removed from a back side of the SOI wafer to form an excavated insulator region. In another step, a conductive layer is deposited on the excavated insulator region. Depositing the conductive layer puts it in physical contact with a body of an active device in a first portion of the excavated insulator region. The conductive layer then couples the body to a contact in a second detached portion of the excavated insulator region.

主权项

1. A method of fabricating an integrated circuit, the method comprising the steps of:
forming an active device in an active layer of a semiconductor-on-insulator wafer; removing a substrate material from a substrate layer disposed on a back side of the semiconductor-on-insulator wafer; removing an insulator material from a back side of the semiconductor-on-insulator wafer to form an excavated insulator region; and depositing an electrically conductive layer on the excavated insulator region; wherein the depositing puts the electrically conductive layer in physical contact with a body of the active device in a first portion of the excavated insulator region, and couples the body to a contact, the contact being in a second detached portion of the excavated insulator region and being physically connected to another part of the active device.