| 发明名称 | Method, apparatus for holding and treatment of a substrate | ||
| 摘要 | Some embodiments discussed relates to an apparatus for holding a substrate, comprising a body with a surface for a semiconductor wafer to rest on, with the surface having a first surface area on which a first area of the semiconductor wafer can rest, and a second surface area on which a second area of the semiconductor wafer can rest, wherein the second surface area protrudes with respect to the first surface area. | ||
| 申请公布号 | US8857805(B2) | 申请公布日期 | 2014.10.14 |
| 申请号 | US200711851976 | 申请日期 | 2007.09.07 |
| 申请人 | Infineon Technologies AG | 发明人 | Lackner Gerald;Maier Christian;Santos Rodriguez Francisco Javier |
| 分类号 | B23Q3/00;H01L21/304;H01L21/683;H01L21/687;H01L21/268;H01L21/02;H01L21/306;H01L21/3065 | 主分类号 | B23Q3/00 |
| 代理机构 | Schwegman Lundberg & Woessner, P.A. | 代理人 | Schwegman Lundberg & Woessner, P.A. |
| 主权项 | 1. An apparatus for holding a substrate, comprising: a body comprising a conductive material with a surface for a semiconductor wafer to rest on, with the surface having a first surface area on which a first area of the semiconductor wafer is to rest; a second surface area on which a second area of the semiconductor wafer is to rest when the first area of the semiconductor wafer is resting on the first surface area, wherein the second surface area protrudes with respect to the first surface area; andthe body includes a dielectric layer; wherein the first surface area of the surface defines a first plane and the second surface area of the surface defines a second plane; and wherein the distance between the first plane and the second plane is greater than about 100 microns. | ||
| 地址 | DE | ||