发明名称 |
Metallic sub-collector for HBT and BJT transistors |
摘要 |
A heterojunction bipolar transistor having an emitter, a base, and a collector, the heterojunction bipolar transistor including a metallic sub-collector electrically and thermally coupled to the collector wherein the metallic sub-collector comprises a metallic thin film, and a collector contact electrically connected to the metallic sub-collector. |
申请公布号 |
US8860092(B1) |
申请公布日期 |
2014.10.14 |
申请号 |
US200812234911 |
申请日期 |
2008.09.22 |
申请人 |
HRL Laboratories, LLC |
发明人 |
Li James Chingwei;Hitko Donald A.;Royter Yakov;Patterson Pamela R. |
分类号 |
H01L31/0328;H01L31/0336;H01L27/082;H01L29/66;H01L29/737 |
主分类号 |
H01L31/0328 |
代理机构 |
Ladas & Parry |
代理人 |
Ladas & Parry |
主权项 |
1. A bipolar transistor having an emitter, a base, and a collector, the bipolar transistor comprising:
a substrate; a collector contact; a metallic subcollector coupled to the collector contact, and the metallic sub-collector electrically and thermally coupled to the collector, wherein the metallic sub-collector comprises a metallic thin film; an adhesion layer between the substrate and the metallic sub-collector, the adhesion layer bonded directly to the substrate and in direct contact with the substrate and bonded directly to the metallic sub-collector and in direct contact with the metallic sub-collector, wherein the adhesion layer consists of a single material; and a thermal via coupled to the metallic subcollector and coupled to the substrate for thermally coupling the metallic sub-collector to the substrate, wherein the thermal via contacts a top surface of the substrate through an opening in the adhesion layer. |
地址 |
Malibu CA US |