发明名称 Metallic sub-collector for HBT and BJT transistors
摘要 A heterojunction bipolar transistor having an emitter, a base, and a collector, the heterojunction bipolar transistor including a metallic sub-collector electrically and thermally coupled to the collector wherein the metallic sub-collector comprises a metallic thin film, and a collector contact electrically connected to the metallic sub-collector.
申请公布号 US8860092(B1) 申请公布日期 2014.10.14
申请号 US200812234911 申请日期 2008.09.22
申请人 HRL Laboratories, LLC 发明人 Li James Chingwei;Hitko Donald A.;Royter Yakov;Patterson Pamela R.
分类号 H01L31/0328;H01L31/0336;H01L27/082;H01L29/66;H01L29/737 主分类号 H01L31/0328
代理机构 Ladas & Parry 代理人 Ladas & Parry
主权项 1. A bipolar transistor having an emitter, a base, and a collector, the bipolar transistor comprising: a substrate; a collector contact; a metallic subcollector coupled to the collector contact, and the metallic sub-collector electrically and thermally coupled to the collector, wherein the metallic sub-collector comprises a metallic thin film; an adhesion layer between the substrate and the metallic sub-collector, the adhesion layer bonded directly to the substrate and in direct contact with the substrate and bonded directly to the metallic sub-collector and in direct contact with the metallic sub-collector, wherein the adhesion layer consists of a single material; and a thermal via coupled to the metallic subcollector and coupled to the substrate for thermally coupling the metallic sub-collector to the substrate, wherein the thermal via contacts a top surface of the substrate through an opening in the adhesion layer.
地址 Malibu CA US