| 发明名称 | Thin light emitting diode and fabrication method | ||
| 摘要 | A method for fabrication a light emitting diode (LED) includes growing a crystalline LED structure on a growth substrate, forming alternating material layers on the LED structure to form a reflector on a back side opposite the growth substrate and depositing a stressor layer on the reflector. A handle substrate is adhered to the stressor layer. The LED structure is separated from the growth substrate using a spalling process to expose a front side of the LED structure. | ||
| 申请公布号 | US8860005(B1) | 申请公布日期 | 2014.10.14 |
| 申请号 | US201313962564 | 申请日期 | 2013.08.08 |
| 申请人 | International Business Machines Corporation | 发明人 | Bedell Stephen W.;Hekmatshoartabari Bahman;Sadana Devendra K.;Shahrjerdi Davood |
| 分类号 | H01L29/06;H01L33/06;H01L33/10 | 主分类号 | H01L29/06 |
| 代理机构 | Tutunjian & Bitetto, P.C. | 代理人 | Tutunjian & Bitetto, P.C. ;Percello Louis J. |
| 主权项 | 1. A method for fabricating a light emitting diode (LED), comprising: growing a crystalline LED structure on a growth substrate; forming alternating material layers on the LED structure to form a reflector on a back side opposite the growth substrate; depositing a stressor layer on the reflector; adhering a handle substrate to the stressor layer; and separating the LED structure from the growth substrate using a spalling process to expose a front side of the LED structure. | ||
| 地址 | Armonk NY US | ||