| 发明名称 | Semiconductor device, semiconductor device manufacturing method, and electronic device | ||
| 摘要 | A semiconductor device includes an insulation layer, a first semiconductor element and a second semiconductor element which are disposed within the insulation layer, a frame which has higher thermal conductivity than the insulation layer and surrounds the first semiconductor element and the second semiconductor element via the insulation layer, and a wiring layer which is disposed over the insulation layer and includes an electrode which electrically connects the first semiconductor element and the second semiconductor element. | ||
| 申请公布号 | US8860211(B2) | 申请公布日期 | 2014.10.14 |
| 申请号 | US201213648397 | 申请日期 | 2012.10.10 |
| 申请人 | Fujitsu Limited | 发明人 | Kon Junichi |
| 分类号 | H01L23/34 | 主分类号 | H01L23/34 |
| 代理机构 | Kratz, Quintos & Hanson, LLP | 代理人 | Kratz, Quintos & Hanson, LLP |
| 主权项 | 1. A semiconductor device, comprising: an insulation layer; a first semiconductor element and a second semiconductor element which are disposed within the insulation layer; a frame that has higher thermal conductivity than the insulation layer and surrounds the first semiconductor element and the second semiconductor element via the insulation layer, wherein the frame is not disposed between the first semiconductor element and the second semiconductor element; and a wiring layer that is disposed over the insulation layer and includes an electrode which electrically connects the first semiconductor element and the second semiconductor element. | ||
| 地址 | Kawasaki JP | ||