| 摘要 |
This invention is related to LED Light Extraction for optoelectronic applications. More particularly the invention relates to (Al, Ga, In)N combined with optimized optics and phosphor layer for highly efficient (Al, Ga, In)N based light emitting diodes applications, and its fabrication method. A further extension is the general combination of a shaped high refractive index light extraction material combined with a shaped optical element. |
| 主权项 |
1. A Light Emitting Diode (LED), comprising:
an LED chip, emitting light at a first wavelength region, wherein the LED chip is grown on a substrate or template and the light is emitted by the LED chip from both front and back sides of the LED chip; a lead frame, to which the LED chip is attached, wherein the LED chip resides on a transparent plate in the lead frame that allows the light to be extracted out of the LED chip from both the front and back sides of the LED chip; a molding which acts as a lens, formed on or around the LED chip and optically coupled to the LED chip, wherein the molding is transparent at the first wavelength region; and a phosphor layer, deposited on top of the molding distant from the LED chip and optically coupled to the molding, the phosphor layer converting the light emitted by the LED chip in the first wavelength region to light in at least a second wavelength region; wherein at least a portion of a top surface of the phosphor layer is roughened, textured, or patterned, so that the portion of the top surface of the phosphor layer is not normal to the light emitted from the LED chip, to minimize internal reflection of the light within the phosphor layer, thereby increasing total luminous efficacy of the LED; and wherein a back side of the substrate or template, or the transparent plate upon which the LED chip resides, is roughened, textured or patterned, to increase light extraction from the back side of the LED chip through the transparent plate and through the lead frame. |
