THIN FILM TRANSISTOR SUBSTRATE OF DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

The present invention relates to a thin film transistor (TFT) substrate of a display device capable of preventing an error due to the oxidation of the surface of a gate electrode, and a method of manufacturing the same. A thin film transistor (TFT) substrate of a display device according to one embodiment of the present invention includes a gate electrode formed on a base substrate; a first gate insulating layer covering the gate electrode; a second gate insulating layer formed on the first gate insulating layer; a semiconductor layer overlapped with the gate electrode on the second gate insulating layer; an etch stop layer partly formed in the upper part of the semiconductor layer; a source electrode formed on one side of the semiconductor layer; and a drain electrode formed on the other side of the semiconductor layer. The first gate insulating layer and the second gate insulating layer are formed with the same material.