| 发明名称 | Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element | ||
| 摘要 | A spin-current switched magnetic memory element includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers. The plurality of magnetic layers includes at least one composite layer. | ||
| 申请公布号 | US8860105(B2) | 申请公布日期 | 2014.10.14 |
| 申请号 | US201314017565 | 申请日期 | 2013.09.04 |
| 申请人 | International Business Machines Corporation | 发明人 | Sun Jonathan Zanhong;Allenspach Rolf;Parkin Stuart Stephen Papworth;Slonczewski John Casimir;Terris Bruce David |
| 分类号 | H01L43/02;H01L43/08;H01L43/12;B82Y25/00;G11C11/16;H01F41/30;H01F10/32;H01L27/22 | 主分类号 | H01L43/02 |
| 代理机构 | McGinn IP Law Group, PLLC | 代理人 | Morris Daniel P.;McGinn IP Law Group, PLLC |
| 主权项 | 1. A spin-current switched magnetic memory element, comprising: a plurality of magnetic layers, at least one of said plurality of magnetic layers having a perpendicular magnetic anisotropy component and comprising a current-switchable magnetic moment, all magnetic moments in said magnetic layers being substantially collinear; and at least one barrier layer formed adjacent to said plurality of magnetic layers. | ||
| 地址 | Armonk NY US | ||