Multi-level charge storage transistors and associated methods

摘要

Methods of fabricating charge storage transistors are described, along with apparatus and systems that include them. In one such method, a pillar of epitaxial silicon is formed. At least first and second charge storage nodes (e.g., floating gates) are formed around the pillar of epitaxial silicon at different levels. A control gate is formed around each of the charge storage nodes. Additional embodiments are also described.

主权项

1. A method comprising:
forming a pillar of epitaxially grown semiconductor material on a doped area of a vertical transistor, the pillar comprising a memory cell that is coupled to the vertical transistor through the doped area; forming a charge storage node around the pillar; and forming a control gate around the charge storage node.