ETCHING COMPOSITION FOR COPPER-BASED METAL LAYER AND METAL OXIDE LAYER AND METHOD OF PREPARING METAL LINE

摘要

The present invention relates to an etching solution composition for etching a copper-based metal film and a metal oxide film, and a method for forming wiring using the same. More specifically, the etching solution includes 5-20 wt% of persulfate, 0.01-1.0 wt% of compound containing fluoride, 0.1-5 wt% of azole compound, 0.05-3 wt% of salt of copper, and the remainder consisting of water. The etching composition has a taper profile with excellent straightness of an etched pattern.