ETCHING COMPOSITION FOR COPPER-BASED METAL LAYER AND METHOD OF PREPARING METAL LINE

摘要

The present invention relates to an etching solution composition for a cooper-based metal film and a method for forming wiring using the same. More specifically, the etching solution includes 0.5-20 wt% of persulfate, 0.1-5 wt% of azole compound, 0.5-3 wt% of inorganic acid or salt thereof (except for salt of persulfate), and the remainder consisting of water. The etching composition selectively etches only the copper-based metal film and has a taper profile with excellent straightness of an etched pattern.