| 摘要 |
<p>The present invention provides an indium target having a tetragonal crystal structure having a mean grain size of 10-500μm. Since the mean grain size of the indium target is smaller than a general indium target, small arc can be induced in a sputtering process using the indium target. Thus, the uniformity of the sputtered thin film is drastically improved. Also, the sputtered thin film with improved uniformity can be used as a copper-indium-gallium deselenide (CIGS) thin film solar cell to obtain good photovoltaic performance.</p> |
