| 摘要 |
A plasma processing device for enhancing an etching uniformity of a substrate is provided to improve an exhaust flow of a gas by changing a shape of a slit formed in a baffle. A plasma processing device comprises a chamber(100), a shielding member(200), and a supporting device(300). The chamber has a predetermined space in order to process a substrate(S). The shielding member is formed on a top inside the chamber, and prevents generation of plasma in a top surface and a side surface of the substrate. A groove(210) is formed on a bottom surface of the shielding member, and surrounds the top surface and the side surface of the substrate. The supporting device is faced with the shielding member, supports the substrate, and includes an electrode(310), a substrate supporting part(320), and a baffle(400). |
