发明名称 |
SPUTTERING TARGET, METHOD FOR MANUFACTURING SPUTTERING TARGET, AND METHOD FOR FORMING THIN FILM |
摘要 |
There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure. |
申请公布号 |
KR20140119835(A) |
申请公布日期 |
2014.10.10 |
申请号 |
KR20147026459 |
申请日期 |
2012.05.28 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;MARUYAMA TETSUNORI;IMOTO YUKI;SATO HITOMI;WATANABE MASAHIRO;MASHIYAMA MITSUO;OKAZAKI KENICHI;NAKASHIMA MOTOKI;SHIMAZU TAKASHI |
分类号 |
H01L21/363;C23C14/34;H01L29/786 |
主分类号 |
H01L21/363 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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