| 摘要 |
A nonvolatile memory device comprises a memory cell, a word line, and a local switch block. The memory cell is connected to bit lines and source lines. The word line selects the memory cell. The local switch block applies a write voltage, a read voltage, and a source line voltage to the bit lines and the source lines in response to a local switch selection signal. The word line is enabled with a first voltage level and the local switch selection signal is enabled with a second voltage level higher than the first voltage level. |
