ETCHING COMPOSITION FOR COPPER-BASED METAL LAYER AND METAL OXIDE LAYER AND METHOD OF PREPARING METAL LINE

摘要

The present invention relates to an etching solution composition for collectively etching a copper-based metal film and a metal oxide film, and a method for forming wiring using the same. More specifically, the etching solution includes: 5-20 wt% of persulfate, 0.01-1.0 wt% of a compound containing fluoride, 0.1-5 wt% of an azole compound, 0.05-3 wt% of an organic acid or salt thereof, and the remainder consisting of water, wherein only copper-based metal film is selectively etched. The etching composition has a taper profile with excellent straightness of an etched pattern.