Testing Method of Magnetic Memory

摘要

A method to test a magnetic memory having a magnetic tunnel junction structure is disclosed. A resistance value of a graph having normal characteristics at a switching voltage level is selected as a reference resistance value, and the resistance value of a memory to be tested is measured. Furthermore, a slope representing the resistance change of the memory cell to be tested can be measured. The resistance change due to repeated testing is also measured to screen changes in the characteristics of the magnetic tunnel junction structure.