METHOD OF PRODUCING THERMOELECTRIC GAS-SENSITIVE MATERIAL

摘要

FIELD: chemistry.SUBSTANCE: method includes forming a film with thickness of not more than 200 nm from semiconductor nanoparticles of SnOwith size of not more than 50 nm. The film of SnOnanoparticles is then annealed at temperature of 330±20 K or 500±20 K for at least 15 min in an oxygen-containing atmosphere, followed by cooling to room temperature at a rate of at least 10 K/s.EFFECT: broader functional capabilities of the material.2 cl, 4 dwg