MEMORY SYSTEM AND DRIVING METHOD THEREOF

摘要

A method to drive a non-volatile memory device, having a plurality of strings formed by penetrating word lines in a panel shape piled on a substrate, includes the steps of: receiving a program order and an address; changing the number of adjacent zones among multiple zones composed by non-selective word lines by the positions of selective word lines corresponding to the inputted address; and authorizing voltages of different zones including the adjacent zones and the other zones.