| 摘要 |
FIELD: electricity.SUBSTANCE: in the method for fabrication of edge at semiconductor devices that includes treatment of a semiconductor substrate having at least two main surfaces and each surface has an edge and at least one edge area joining to at least one of edges, application of chemical etch at simultaneous rotation of the semiconductor substrate directed towards at least one edge area of the substrate so that etching is limited by the edge area. Application of etch is started radially, towards the inner part, and in process of etching the treatment area is changed to radial outside treatment.EFFECT: receipt of a semiconductor device edge at less number of stages in the method and higher accuracy and reproducibility.7 cl, 7 dwg |
