| 摘要 |
PURPOSE: A thin film transistor and a method for manufacturing the same are provided to reduce a manufacturing cost and improve productivity using the metal oxide with high quality as an active layer without resetting a target. CONSTITUTION: A thin film transistor includes a metal oxide active layer(230), a gate electrode(210), a gate insulation layer(220), a source electrode(250), and a drain electrode(260). The gate electrode is partially overlapped in a metal oxide active layer. The gate insulation layer is prepared between the metal oxide active layer and the gate electrode. The source and drain electrodes are partially connected to the metal oxide active layer. |
