| 摘要 |
PROBLEM TO BE SOLVED: To achieve highly accurate superposition of a mask pattern with a base pattern on a substrate, without a projection optical system.SOLUTION: An exposure apparatus 100 includes: an illumination optical apparatus 10 for illuminating a mask M with an exposure beam IL; a mask table MTB for retaining the periphery of a mask pattern region from upward in such a manner that the mask pattern face is substantially parallel to an XY plane, and for making force at least in a plane parallel to the XY plane function on the mask; and a wafer stage WST for retaining a wafer W substantially parallel to the XY plane and moving along the XY plane. |
