| 摘要 |
PROBLEM TO BE SOLVED: To provide a photomask structure and an etching method excellent in terms of etching resistance and CD bias controllability.SOLUTION: A photomask includes a translucent substrate 102 and an opaque multilayer absorption layer 104 positioned atop the substrate. The opaque multilayer absorption layer possesses a self-masking layer 108 positioned atop a bulk absorption layer 106. The self-masking layer includes one of nitrogenized tantalum and silicon-based materials(TaSiON), tantalum boron oxide-based materials (TaBO), and oxidized and nitrogenized tantalum-based materials (TaON). The bulk absorption layer includes one of tantalum silicide-based materials (TaSi), nitrogenized tantalum boride-based materials (TaBN), and tantalum nitride-based materials (TaN). Since the etching rate of the self-masking layer is low during a bulk absorption layer etching process, the self-masking layer functions as a hard mask. |
