Method of Forming Metal Contacts With Low Contact Resistances in a Group III-N HEMT

摘要

Metal contacts with low contact resistances are formed in a group III-N HEMT by forming metal contact openings in the barrier layer of the group III-N HEMT to have depths that correspond to low contact resistances. The metal contact openings are etched in the barrier layer with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer.

主权项

1. A method of forming a high electron mobility transistor comprising:
determining a separation distance between a top surface of a channel layer and a bottom surface of a metal contact that corresponds to a lowest contact resistance, the channel layer lying below and touching a barrier layer; and etching the barrier layer to form a metal contact opening that has a bottom surface, the bottom surface of the metal contact opening being spaced apart from the top surface of the channel layer by approximately the separation distance.