REDUCTION OF POWER CONSUMPTION IN MEMORY DEVICES DURING REFRESH MODES

摘要

Devices, systems, and methods include an active mode to accommodate read/write operations of a memory device and a self-refresh mode to accommodate recharging of voltage levels representing stored data when read/write operations are idle. At least one register source provides a first voltage level and a second voltage level that is less than the first voltage level. With such a configuration, during the active mode, the memory device operates at the first voltage level as provided by the at least one register source, and during the self-refresh mode, the memory device operates at the second voltage level as provided by the at least one register source.

主权项

1. A memory device, comprising:
an active mode to accommodate read/write operations; a self-refresh mode to accommodate recharging of voltage levels representing stored data when read/write operations are idle; and at least one register source configured to provide a first voltage level and a second voltage level that is less than the first voltage level, wherein during the active mode, the memory device operates at the first voltage level as provided by the at least one register source, and during the self-refresh mode, the memory device operates at the second voltage level as provided by the at least one register source.