发明名称 |
ELECTRONIC DEVICE STRUCTURE AND METHOD OF MAKING ELECTRONIC DEVICES AND INTEGRATED CIRCUITS USING GRAYSCALE TECHNOLOGY AND MULTILAYER THIN-FILM COMPOSITES |
摘要 |
A physical structure and a method for forming a electronic devices on a substrate comprising: providing a substrate; forming a plurality of layers on the substrate, the layers comprising at least two layers of conducting material and a layer of insulating material therebetween; depositing photoresist material onto predetermined regions of the plurality of layers, the photoresist material varying in thickness; utilizing gray scale illumination on the photoresist material; removing a portion of the layers using physical etching to expose predetermined portions of the conducting layers. Optionally, the photoresist may be utilized on a plurality of discrete electronic devices concurrently, such that the gray scale illumination is conducted on a plurality of discrete electronic devices concurrently. Similarly, the physical etching may be conducted on the discrete electronic devices concurrently; removing different thicknesses of material concurrently. Also claimed is a product made by the claimed method. |
申请公布号 |
US2014299967(A1) |
申请公布日期 |
2014.10.09 |
申请号 |
US201313857343 |
申请日期 |
2013.04.05 |
申请人 |
U.S.Army Research Laboratory ATTN: RDRL-LOC-I |
发明人 |
Smith GABRIEL l.;HANRAHAN BRENDAN;WAITS CHRISTOPHER M.;POLCAWICH RONALD G.;SANCHEZ LUZ;BEDAIR SARAH SALAH |
分类号 |
B81C1/00;B81B3/00 |
主分类号 |
B81C1/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method for forming a electronic devices on a substrate comprising:
providing a substrate; forming a plurality of layers on the substrate, the layers comprising at least two layers of conducting material and a layer of insulating material there between; depositing photoresist material onto predetermined regions of the plurality of layers, the photoresist material varying in thickness; utilizing gray scale illumination on the photoresist material; removing a portion of the layers using physical etching to expose predetermined portions of the at least two conducting layers. |
地址 |
Adelphi MD US |