INTEGRATED CIRCUIT DEVICES AND FABRICATION TECHNIQUES

摘要

Integrated circuit devices and fabrication techniques. A semiconductor device fabrication method may include doping, in a same processing step, first and second portions of a substrate of an integrated circuit. The first portion corresponds to a doped region of a semiconductor device. The second portion corresponds to a via contact. The method may further include, after the doping, forming the gate of the semiconductor device.

主权项

1. A semiconductor device fabrication method, comprising:
forming a fully-depleted channel of a finFET in a cell of a static random-access memory (SRAM) by doping, in a same processing step, portions of a silicon-on-insulator (SOI) substrate of an integrated circuit, a first of the portions corresponding to a first doped region of a finFET, a second of the portions corresponding to a second doped region of the finFET, and a third of the portions corresponding to a via contact; and after the doping, forming a gate of the finFET.