发明名称 |
HETEROGENEOUS INTERGRATION OF GROUP III-V OR II-VI MATERIALS WITH SILICON OR GERMANIUM |
摘要 |
Substrates for an electronic circuit and device manufacturing methods are disclosed. According to an embodiment, the substrate comprises: a silicon or germanium wafer impregnated with impurities that form one or more deep energy levels within the band gap of the material forming the wafer, wherein at least one of said deep energy levels is positioned at least 0.3 eV away from the conduction band if the level is a donor level or at least 0.3 eV away from the valence band if the level is an acceptor level; and a device layer formed on a surface of said wafer, said device layer comprising electronically functional components formed in a layer of Periodic Table Group III-V or II-VI material. The wafer may be formed from Cz silicon or Cz germanium, for example. |
申请公布号 |
US2014299872(A1) |
申请公布日期 |
2014.10.09 |
申请号 |
US201214110139 |
申请日期 |
2012.04.04 |
申请人 |
Wilshaw Peter;Mallik Kanad;Jordan Doug;De Groot Cornelis |
发明人 |
Wilshaw Peter;Mallik Kanad;Jordan Doug;De Groot Cornelis |
分类号 |
H01L29/267;H01L21/02;H01L29/225;H01L29/16;H01L29/20 |
主分类号 |
H01L29/267 |
代理机构 |
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代理人 |
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主权项 |
1. A substrate for an electronic circuit, comprising:
a silicon or germanium wafer impregnated with impurities that form one or more deep energy levels within the band gap of the material forming the wafer, wherein at least one of said deep energy levels is positioned at least 0.3 eV away from the conduction band if the level is a donor level or at least 0.3 eV away from the valence band if the level is an acceptor level; and a device layer formed on a surface of said wafer, said device layer comprising electronically functional components formed in a layer of Periodic Table Group III-V or II-VI material, wherein: said Periodic Table Group III-V or II-VI material layer is formed using an epitaxial deposition process. |
地址 |
Oxford GB |