| 发明名称 |
SEMICONDUCTOR DEVICE HAVING A COMPLEMENTARY FIELD EFFECT TRANSISTOR |
| 摘要 |
A method for controlling power supply current in a CMOS circuit, the method including applying a first predetermined voltage to a diode connected n-channel replica transistor, the n-channel replica transistor operating in weak inversion, applying a first substrate voltage to the substrate of the n-channel replica transistor so that the current flowing in the n-channel replica transistor equals a first predetermined target current, and applying the first substrate voltage to substrates of n-channel transistors in the CMOS circuit |
| 申请公布号 |
US2014300408(A1) |
申请公布日期 |
2014.10.09 |
| 申请号 |
US201414310146 |
申请日期 |
2014.06.20 |
| 申请人 |
PS4 LUXCO S.A.R.L. |
发明人 |
Miyatake Shinichi;Narui Seiji;Tanaka Hitoshi |
| 分类号 |
G05F1/46 |
主分类号 |
G05F1/46 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for controlling power supply current in a CMOS circuit, the method comprising:
applying a first predetermined voltage to a diode connected n-channel replica transistor, the n-channel replica transistor operating in weak inversion; applying a first substrate voltage to the substrate of the n-channel replica transistor so that the current flowing in the n-channel replica transistor equals a first predetermined target current; and applying the first substrate voltage to substrates of n-channel transistors in the CMOS circuit. |
| 地址 |
Luxembourg LU |
