| 摘要 |
<p>A semiconductor device having U-shaped channel, comprising: a U-shaped channel region (401), a source region (201), and a drain region (202) formed in a semi-conductor substrate, a first insulating thin film layer (203), a floating gate (205), a second insulating thin film layer (206), and a control gate (207) being arranged on the U-shaped channel region (401), a p-n junction diode being arranged between the floating gate (205) and the drain region (202), and a gated diode consisting of the control gate (207), the second insulating thin film layer (206), and the p-n junction diode, the control gate (207) acting as the gate electrode. The semi-conductor device employs a U-shaped channel structure to extend the length of the current channel region, and increases the depth of the drain region to reduce the parasitic drain current of an MOS transistor between the floating gate and the current channel region, thereby allowing the unit surface area of a semiconductor memory device to be reduced and chip density to be increased, whilst also having the effect of increasing the compatibility and operating reliability of a semiconductor memory device and logical circuit.</p> |
