| 摘要 |
PROBLEM TO BE SOLVED: To provide a chemical mechanical composition for a base material containing tungsten.SOLUTION: A tungsten chemical mechanical polishing (CMP) composition contains: a) 0.1 wt.% to 25 wt.% of silica, alumina, ceria, titania, zirconia, and nano-sized polishing agent selected from a group consisting of their combination; b) 0.1 wt.% to 0.5 wt.% of colloidal silica coated by an iron compound, colloid or nano-sized inorganic metal oxide particles coated by an iron compound, and solid catalyst of particles coated by an iron compound selected from a group consisting of their combination, c) 0.0001 wt.% to 0.5 wt.% of piperazine derivative, cyanate salt and chemical additive selected from a group consisting of their combination; d) 0.5 wt.% to 10 wt.% of oxidizing agent, and e) a carrier of liquid, and pH of the CMP composition is approximately 2.0 to approximately 8.0. |
